pde-n400gs12bw-0 i i i ig g g gb b b bt t t t m m m mod od od odu u u ul l l le e e e mbn400gs12bw silicon n-channel igbt outline drawing f f f fea ea ea eat t t tu u u ure re re res s s s * high speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(usfd). * isolated head sink (terminal to base). absolute maximum ratings (tc=25 c ) item symbol unit mbn400gs12bw collector emitter voltage v ces v 1,200 gate emitter voltage v ges v 20 collector current dc i c 400 1ms i cp a 800 forward current dc i f 400 (1) 1ms i fm a 800 collector power dissipation pc w 2,000 junction temperature t j c -40 ~ +150 storage temperature t stg c -40 ~ +125 isolation voltage v iso v rms 2,500(ac 1 minute) screw torque terminals - 1.37(14)/2.94(30) (2) mounting - n.m (kgf.cm) 2.94(30) (3) notes:(1)rms current of diode 180arms max. (2)recommended value 1.18/2.45n.m(12/25kgf.cm) (3)recommended value 2.45n.m(25kgf.cm) characteristics (tc=25 c ) item symbol unit min. typ. max. test conditions collector emitter cut-off current i ces ma - - 1.0 v ce =1,200v,v ge =0v gate emitter leakage current i ges na - - 500 v ge = 20v,v ce =0v collector emitter saturation voltage v ce(sat) v-2.73.4i c =400a,v ge =15v gate emitter threshold voltage v ge(to) v--10v ce =5v, i c =400ma input capacitance c ies pf - 37,000 - v ce =10v,v ge =0v,f=1mhz rise time t r - 0.25 0.5 v cc =600v turn on time t on -0.40.7r l =1.5 w fall time t f - 0.25 0.35 r g =2.7 w (4) switching times turn off time t off m s - 0.75 1.1 v ge = 15v peak forward voltage drop v fm v--3.5i f =400a,v ge =0v reverse recovery time t rr m s--0.4i f =400a,v ge =-10v, di/dt=400a/ m s igbt rth(j-c) - - 0.06 thermal impedance fwd rth(j-c) c/w - - 0.12 junction to case notes:(4) r g value is the test condition?s value for decision of the switching times, not recommended value. determine the suitable r g value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. weight: 480 (g) terminals e c g e unit in mm
v ge = 15v 13v12v 800 0 2 4 6 8 10 400 600 200 0 800 600 200 400 0 11v typical 10v 9v collector current, ic (a) collector to emitter v oltage , v ce (v) collector current vs. collector to emitter v olta g e ic = 400a ic = 800a 10 8 6 4 2 0 0 5 10 15 20 typical collector to emitter v oltage , v ce (v) gate to emitter v oltage , v ge (v) ic = 800a ic = 400a collector to emitter v olta g e vs. gate to emitter v olta g e 20 15 10 5 0 0 500 1000 1500 2000 3000 2500 typical typical vcc = 600v ic = 400a tc = 25 c gate to emitter v oltage , v ge (v) gate charge , q g (nc) gate c har g e c haracteristics 600 800 400 200 0 0 1 2 3 4 5 f orw ard current, i f (a) f orw ard v oltage , v f (v) forwar d v olta g e of free-wheeling diode 10 8 6 4 2 0 0 5 10 15 20 typical collector to emitter v oltage , v ce (v) gate to emitter v oltage , v ge (v) collector to emitter v olta g e vs. gate to emitter v olta g e 0 2 4 6 8 10 11v typical 10v 9v tc = 125 c collector current, ic (a) collector to emitter v oltage , v ce (v) collector current vs. collector to emitter v olta g e pde-n400gs12bw -0 tc = 25 c 14v v ge = 15v 13v12v 14v v ge = 0 tc = 25 c tc = 125 c tc = 125 c tc = 25 c pc = 2000w
1.5 1.0 0.5 0 0 100 200 300 400 500 typical typical typical switching time , t ( m s) collector current, i c (a) switc hing time vs. collector current tr tf ton toff vcc = 600v v ge = 15v r g = 2.7 w t c = 25 c resistiv e load 40 60 80 20 0 0 100 300 200 400 500 switching loss , et on ,et off , e rr (mj/pulse) collector current, i c (a) switc hing loss vs. collector current 10 1 0.1 1 10 100 switching time , t ( m s) gate resistance , r g ( w ) switc hing time vs. gate resistance tr tf ton toff v cc = 600v v ge = 15v i c = 400a t c = 25 c resistiv e load typical 100 10 1 1 10 100 switching loss , et on , et off (mj/pulse) gate resistance , r g ( w ) switc hing loss vs. gate resistance v cc = 600v v ge = 15v i c = 400a t c = 125 c inductiv e load err err eton etoff vcc = 600v v ge = 15v r g = 2.7 w t c = 125 c inductiv e load 1000 100 10 1 0.1 0 200 400 600 800 1000 1200 1400 collector current, ic (a) collector to emitter v oltage , v ce (v) re ver se biased saf e operating area etoff eton 1 0.1 0.01 0.001 0.001 0.01 0.1 1 10 t r ansient ther mal impedance , r th(j-c) ( c/w) time , t (s) t ransient thermal impedance diode igbt v ge = 15v r g = 2.7 w t c 125 c pde-n400gs12bw -0
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